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CSD22205L

Part No CSD22205L
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 7.4A 4PICOSTAR / P-Channel 8 V 7.4A (Ta) 600mW (Ta) Surface Mount 4-PICOSTAR
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Texas Instruments
Series NexFET™
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 9.9mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 4.5 V
Vgs (Max) -6V
Input Capacitance (Ciss) (Max) @ Vds 1390 pF @ 4 V
Power Dissipation (Max) 600mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 4-PICOSTAR
Package / Case 4-XFLGA
Base Product Number CSD22205
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 296-49605-6,CSD22205L-ND,296-49605-2,296-49605-1
Standard Package 3,000
Win Source Part Number 977331-CSD22205L
Ultra Librarian 3D Model Ultra Librarian CSD22205L CAD Model

Description

The CSD22205L is a high-performance, N-Channel NexFET™ Power MOSFET designed and manufactured by Texas Instruments. This product is a testament to Texas Instruments' commitment to providing energy-efficient power management solutions. The CSD22205L is specifically engineered to deliver low on-resistance and minimal power loss, making it an ideal choice for a wide range of power applications.

Key Features

  • Low On-Resistance: The CSD22205L boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power circuits.
  • Ultra-Low Qg and Qgs: With its ultra-low gate charge and associated parameters, this MOSFET ensures minimal switching losses, which is crucial for high-frequency power conversion applications.
  • Advanced Packaging: Encased in a compact SON 2x2 package, the CSD22205L minimizes the footprint on PCBs and allows for high-density power designs.
  • High Continuous Drain Current: It supports a high continuous drain current, making it suitable for handling high power levels without performance degradation.

Applications

The versatility of the CSD22205L allows it to be used in a variety of applications. It is particularly well-suited for:

  • DC/DC Converters
  • Motor Control Systems
  • Power Supply Modules
  • Battery Management Systems
  • Load Switches

Technical Specifications

Parameter Value
VDS (Drain-to-Source Voltage) 12V
RDS(on) 8.9 mΩ
Continuous Drain Current (ID) 39 A
Package SON 2x2

The CSD22205L's robustness and efficiency make it an excellent component for designers looking to optimize their power management systems. With its superior performance parameters, this MOSFET from Texas Instruments stands out as a reliable and effective solution for modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3339 $50.0850
365+ $0.2740 $100.0100
570+ $0.2654 $151.2780
780+ $0.2568 $200.3040
1,010+ $0.2483 $250.7830
1,350+ $0.2226 $300.5100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,991 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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