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Same model may have multiple batches, images only for reference.
XP161A11A1PR-G Torex Semiconductor Ltd
Same model may have multiple batches, images only for reference.

XP161A11A1PR-G

Part No XP161A11A1PR-G
Manufacturer Torex Semiconductor Ltd
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4A SOT89
Datasheet
XP161A11A1PR-G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Torex Semiconductor Ltd
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Input Capacitance 270pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 65 mOhm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89
Dimension TO-243AA
Win Source Part Number 1119472-XP161A11A1PR-G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian XP161A11A1PR-G CAD Model

Description

The Torex Semiconductor Ltd XP161A11A1PR-G is an N-Channel MOSFET that is designed to handle a maximum power dissipation of 2W (Ta).

  • Channel Type: N-Channel
  • Power Dissipation: 2W (Ta)
  • Package: SOT-89
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4A (Ta) @ 25°C
  • Max Rds On @ Id, Vgs: 65 mOhm @ 2A, 10V
  • Max Gate-Source Voltage: ±20V
  • Max Input Capacitance: 270pF @ 10V
  • Category: Discrete Semiconductor Products

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365+ $0.3201 $116.8365
560+ $0.3100 $173.6000
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1,335+ $0.2600 $347.1000
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