The 2SC4393 is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in high-frequency amplifier applications, particularly in VHF and UHF bands. Known for its low noise figure and high gain, the 2SC4393 is ideal for sensitive receiver circuits.

Applications:

• Low-noise amplifiers (LNAs)
• VHF/UHF tuners
• RF front-end circuits
• Oscillators
• Mixers in communication systems

Features:

• NPN Silicon Epitaxial Planar Transistor
• Low Noise Figure (NF)
• High Gain (hFE)
• High Transition Frequency (fT)
• Small surface mount package

Benefits:

• Improved signal clarity: Low noise figure minimizes the addition of unwanted noise, enhancing the signal-to-noise ratio in receiver applications.
• Efficient amplification: High gain ensures robust amplification of even weak signals.
• Optimized for high frequencies: Designed specifically for VHF and UHF bands, delivering excellent performance in high-frequency circuits.
• Compact design: Small surface mount package allows for easy integration into space-constrained devices.
• Stable operation: Provides reliable performance under a variety of operating conditions.

Specifications:

The 2SC4393 features a collector-emitter voltage (VCEO) of 12V, a collector current (IC) of 30mA, and a power dissipation (PC) of 0.2W. It typically exhibits a low noise figure (NF) of around 1.0 dB and a high transition frequency (fT) of 9 GHz. The current gain (hFE) generally ranges from 50 to 200. The transistor is commonly available in a small surface-mount package such as the SOT-343. Its operating junction temperature ranges from -55°C to +150°C, ensuring reliability across a broad range of conditions.