The 2SJ680 is a P-channel MOSFET transistor manufactured by Toshiba. It is designed for switching applications, especially in power management circuits and high-side switch configurations.

Applications:

• Switching power supplies
• DC-DC converters
• Motor drives
• Solid-state relays
• High-side switches

Features:

• Low on-resistance (RDS(on))
• High-speed switching
• Low gate charge
• Avalanche rated

Benefits:

• Efficient power conversion due to low on-resistance.
• Reduced switching losses in high-frequency applications.
• Simplified gate drive requirements due to low gate charge.
• Robust performance under inductive loads.

Technical Specifications:

The 2SJ680 features a drain-source voltage (VDSS) of -60V and a gate-source voltage (VGSS) of ±20V. The continuous drain current (ID) is -15A, and the pulsed drain current (IDM) is -60A. The power dissipation (PD) is 30W. The on-resistance (RDS(on)) is typically 0.08 ohms at VGS = -10V. The operating temperature range is -55°C to +150°C.

The 2SJ680 is typically available in a TO-220 package.