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2SK3565(Q,M)

Part No 2SK3565(Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 5A TO220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series π-MOSIV
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 25 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Base Product Number 2SK3565
Standard Package 50 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 849473-2SK3565(Q,M)
Ultra Librarian 3D Model Ultra Librarian 2SK3565(Q,M) CAD Model

Description

The 849473-2SK3565(Q,M) is a N-channel MOSFET transistor designed for use in discrete semiconductor applications.

  • Channel Type: N-Channel
  • Drain to Source Voltage (Vdss): 900V
  • Continuous Drain Current (Id): 5A
  • On-Resistance (Rds On): 2.5Ohm
  • Gate Threshold Voltage (Vgs(th)): 4V
  • Power Dissipation: 45W
  • Package: TO-220-3 Full Pack
  • Mounting Type: Through-Hole

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