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Same model may have multiple batches, images only for reference.
HN4A06J(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

HN4A06J(TE85L,F)

Part No HN4A06J(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 120V 0.1A SMV
Datasheet
HN4A06J(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Transistor Polarity 2 PNP (Dual) Matched Pair, Common Emitter
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 6V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SMV
Win Source Part Number 115310-HN4A06J(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HN4A06J(TE85L,F) CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 115310-HN4A06J(TE85L,F). It is a dual PNP transistor with a common emitter and a frequency transition of 100MHz. It belongs to the category of Discrete Semiconductor Products and has a maximum power dissipation of 300mW. It has a medium popularity with a balanced supply and demand status.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5231 $52.3100
235+ $0.4292 $100.8620
365+ $0.4158 $151.7670
500+ $0.4024 $201.2000
645+ $0.3890 $250.9050
865+ $0.3487 $301.6255
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,590 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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