The RN2130F TPL3,F is a silicon N channel MOS type field effect transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for high-speed switching applications and features a low on-resistance, making it suitable for efficient power management circuits.

Applications

• High-speed switching circuits
• DC-DC converters
• Power management systems
• Load switches
• Motor control circuits

Features

• N-Channel MOSFET
• Low drain-source on-resistance (RDS(on))
• High-speed switching
• Enhancement mode
• Available in a small surface mount package

Benefits

• Efficient Power Management: Low RDS(on) minimizes power loss, increasing overall efficiency.
• High-Speed Switching: Enables faster operation in switching applications, improving performance.
• Compact Design: Small package size allows for use in space-constrained applications.
• Reliable Performance: Toshiba's manufacturing ensures consistent and dependable operation.

Technical Specifications

The RN2130F TPL3,F typically features a low gate threshold voltage, allowing it to be easily driven by logic-level signals. Its drain-source voltage rating is suitable for various power supply voltages. The on-resistance is a key parameter, and it is typically very low, minimizing conduction losses. The gate charge is also low, contributing to fast switching speeds. Specific values for these parameters can be found in the official Toshiba datasheet.

The device is typically supplied in a surface-mount package, facilitating automated assembly. It is designed to meet industry standards for reliability and environmental compliance.