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Same model may have multiple batches, images only for reference.
SSM3K7002BF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K7002BF

Part No SSM3K7002BF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.2A S-MINI
Datasheet
SSM3K7002BF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Input Capacitance 17pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 2.1 Ohm @ 500mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-59
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 193025-SSM3K7002BF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K7002BF CAD Model

Description

This electronic component is a MOSFET manufactured by Toshiba Semiconductor and Storage with the Win Source Part Number 193025-SSM3K7002BF.

  • Supply and Demand Status: sufficient
  • Maximum Power Dissipation: 200mW (Ta)
  • Drain-Source Breakdown Voltage: 60V
  • Mounting: SMD (SMT)
  • Dimensions: TO-236-3, SC-59, SOT-23-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,430+ $0.0404 $57.7720
3,450+ $0.0335 $115.5750
5,360+ $0.0323 $173.1280
7,410+ $0.0312 $231.1920
9,620+ $0.0300 $288.6000
12,500+ $0.0277 $346.2500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 1430 pcs
Order Increment : 1 pcs
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