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SSM6N68NU,LF

Part No SSM6N68NU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog TRANSISTORS
Description MOSFETs LowON Res MOSFET ID=4A VDSS=30V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba
Technology Si
Mounting Style SMD/SMT
Package / Case UDFN-6
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 4 A
Rds On - Drain-Source Resistance 84 mOhms
Vgs - Gate-Source Voltage - 8 V, + 12 V
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 1.8 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1 W
Channel Mode Enhancement
Qualification AEC-Q101
Tradename U-MOSVII-H
Series SSM6N68NU
Packaging Cut Tape
Packaging Reel
Configuration Dual
Transistor Type 1 N-Channel
Brand Toshiba
Forward Transconductance - Min 5.2 S
Product Type MOSFETs
Standard Pack Qty 3000
Subcategory Transistors
Typical Turn-Off Delay Time 9 ns
Typical Turn-On Delay Time 26 ns
Ultra Librarian 3D Model Ultra Librarian SSM6N68NU,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM6N68NU,LF is a dual N-channel MOSFET array.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Power Rating: 2W (Ta)
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
  • Mounting Technology: SMD (SMT)
  • Packaging: tape and reel
  • MSL Level: 1 (unlimited)
  • HTSUS: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
350+ $0.1433 $50.1550
855+ $0.1176 $100.5480
1,320+ $0.1140 $150.4800
1,815+ $0.1103 $200.1945
2,350+ $0.1066 $250.5100
3,140+ $0.0956 $300.1840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 350 pcs
Order Increment : 1 pcs
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