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Same model may have multiple batches, images only for reference.
SSM6P41FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6P41FE(TE85L,F)

Part No SSM6P41FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 0.72A ES6
Datasheet
SSM6P41FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 720mA
Maximum Rds On at Id,Vgs 300 mOhm @ 400mA, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 1.76nC @ 4.5V
Max Input Capacitance 110pF @ 10V
Maximum Power Dissipation 150mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Win Source Part Number 096960-SSM6P41FE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6P41FE(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage SSM6P41FE(TE85L,F) is a 2 P-Channel (Dual) FET with a logic level gate.

  • Application: discrete semiconductor applications
  • Mounting Technology: SMD (SMT)
  • Maximum Power Dissipation: 150mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 720mA
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate Charge: 1.76nC @ 4.5V
  • Maximum Input Capacitance: 110pF @ 10V
  • Maximum Rds On at Id,Vgs: 300 mOhm @ 400mA, 4.5V
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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