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TK12E60W

Part No TK12E60W
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 11.5A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 600μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 890pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 5.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 212861-TK12E60W
Family Name TK12E60W
ECCN EAR99
Country of Origin China
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK12E60W CAD Model

Description

It is a Super Junction MOSFET that features an N-channel polarity, a drain-source breakdown voltage of 600V, and a continuous drain current of 11.5A @ 25°C.

  • Family Name: TK12E60W
  • Power Dissipation: 110W (Tc)
  • Drive Voltage: 10V
  • Package: TO-220 case
  • Mounting: Through-hole
  • Status: Active
  • Operating Temperature Range: 150°C (TJ)
  • Maximum Input Capacitance: 890pF @ 300V
  • Estimated EOL Date: 2026
  • Usage: Commonly used in the market

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0072 $60.4320
140+ $0.8270 $115.7800
220+ $0.8016 $176.3520
300+ $0.7750 $232.5000
390+ $0.7496 $292.3440
520+ $0.6722 $349.5440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 82,500 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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