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Same model may have multiple batches, images only for reference.
TK7A65W,S5X Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK7A65W,S5X

Part No TK7A65W,S5X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 6.8A TO-220SIS / Silicon N-Channel MOS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 490pF @ 300V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 30W (Tc)
Rds On (Maximum) @ Id, Vgs 780 mOhm @ 3.4A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220SIS
Package TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 796850-TK7A65W,S5X
Popularity Medium
Supply and Demand Status Limited
Family Name TK7A65W
Country of Origin Malaysia
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK7A65W,S5X CAD Model

Description

The 796850-TK7A65W,S5X MOSFET transistor from Toshiba Semiconductor and Storage is a MOSFET transistor from the DTMOSIV series.

  • Package: TO-220-3 Full Pack, Isolated Tab
  • Mounting Type: Through Hole
  • Maximum Operating Temperature: 150°C
  • Continuous Drain Current: 6.8A (Ta)
  • Gate Charge: 15nC @ 10V
  • Maximum Power Dissipation: 30W (Tc)
  • Maximum Vgs: ±30V
  • Maximum Rds On: 780 mOhm @ 3.4A, 10V
  • Supply and Demand Status: Limited

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