The TPCA8016-H is an N-channel MOS (Metal Oxide Semiconductor) field-effect transistor from Toshiba Semiconductor. This device is designed for high-efficiency power management applications. It features low on-resistance and high current capability.

Applications

• DC-DC Converters
• Load Switching
• Power Management in Portable Devices
• Motor Control

Features

• Low Drain-Source On-Resistance: RDS(ON) = 4.5 mΩ (max) at VGS = 10 V
• High Drain Current: ID = 20 A
• Low Gate Charge: Qg = 15 nC (typical)
• 100% Avalanche Tested
• RoHS Compliant
• Lead (Pb)-Free

Benefits

• Increased power efficiency due to low on-resistance.
• Reduced power losses and heat generation.
• Enhanced switching performance.
• Improved system reliability with avalanche ruggedness.
• Environmentally friendly due to RoHS compliance and lead-free construction.

Additional Details

The TPCA8016-H has a drain-source voltage (VDS) rating of 30V. It is packaged in a SOP-8 (Small Outline Package) with enhanced thermal performance. This enables efficient heat dissipation and allows for higher power handling capabilities. The device is designed for surface mount technology (SMT) assembly. Its low gate charge contributes to faster switching speeds and reduced switching losses. Its avalanche rating provides additional protection against voltage transients.