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Same model may have multiple batches, images only for reference.
TPH2010FNH,L1Q
Same model may have multiple batches, images only for reference.

TPH2010FNH,L1Q

Part No TPH2010FNH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 250V 5.6A 8SOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 198mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 100 V
Power Dissipation (Max) 1.6W (Ta), 42W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP Advance (5x5)
Case / Package 8-PowerVDFN
Package Tape & Reel
Supply and Demand Status Normal
Win Source Part Number 1495178-TPH2010FNH,L1Q
Ultra Librarian 3D Model Ultra Librarian TPH2010FNH,L1Q CAD Model

Description

N

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