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IRF820ASPBF

Part No IRF820ASPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 2.5A D2PAK / N-Channel 500 V 2.5A (Tc) 50W (Tc) Surface Mount D²PAK (TO-263)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IRF820
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names *IRF820ASPBF
Standard Package 50
Win Source Part Number 1119228-IRF820ASPBF
Ultra Librarian 3D Model Ultra Librarian IRF820ASPBF CAD Model

Description

The IRF820ASPBF is a N-Channel MOSFET (Metal Oxide) transistor manufactured by Vishay Siliconix. This transistor has a Win Source Part Number of 1119228-IRF820ASPBF, and is part of the Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single category.

  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Power Dissipation (Max): 50W (Tc)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Mounting Type: SMD (SMT)
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V

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