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Same model may have multiple batches, images only for reference.
IRFIB7N50APBF Real Image
Same model may have multiple batches, images only for reference.

IRFIB7N50APBF

Part No IRFIB7N50APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 6.6A TO220FP
Datasheet
IRFIB7N50APBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 1423pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 520 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 017611-IRFIB7N50APBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFIB7N50APBF CAD Model

Description

The Vishay IRFIB7N50APBF is an N-channel MOSFET transistor with a drain-source breakdown voltage of 500V and a continuous drain current of 6.6A (Tc) @ 25°C.

  • Maximum Rds On: 520 mOhm @ 4A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 52nC @ 10V
  • Maximum Input Capacitance: 1423pF @ 25V
  • Package: TO-220-3 full pack, isolated tab
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1296 $62.1280
125+ $0.9275 $115.9375
195+ $0.8986 $175.2270
270+ $0.8697 $234.8190
345+ $0.8408 $290.0760
465+ $0.7531 $350.1915
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Availability: 22,000 pieces
MOQ: 55 pcs
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