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IRFL9014PBF

Part No IRFL9014PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 1.8A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 3.1W (Tc)
Maximum Rds On at Id,Vgs 500 mOhm @ 1.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1046971-IRFL9014PBF
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFL9014PBF CAD Model

Description

This Vishay MOSFET is a discrete semiconductor product with a maximum power dissipation of 2W (Ta) and 3.1W (Tc).

  • Polarity: P-Channel
  • Mounting: SMD (SMT)
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: SOT-223
  • Dimensions: TO-261-4 and TO-261AA
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 1.8A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 12nC @ 10V
  • Maximum Input Capacitance: 270pF @ 25V
  • Maximum Rds On @ Id,Vgs: 500 mOhm @ 1.1A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
235+ $0.2486 $58.4210
500+ $0.2326 $116.3000
775+ $0.2245 $173.9875
1,110+ $0.2085 $231.4350
1,445+ $0.2005 $289.7225
1,800+ $0.1926 $346.6800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 371,160 pieces
MOQ: 235 pcs
Order Increment : 1 pcs
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