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Same model may have multiple batches, images only for reference.
IRLZ14PBF Real Image
Same model may have multiple batches, images only for reference.

IRLZ14PBF

Part No IRLZ14PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 10A TO-220AB
Datasheet
IRLZ14PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 8.4nC @ 5V
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 43W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 6A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017815-IRLZ14PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLZ14PBF CAD Model

Description

The Vishay IRLZ14PBF is an N-Channel MOSFET with a maximum power dissipation of 43W (Tc).

  • Popularity: Medium
  • Category: Discrete Semiconductor Products
  • Availability: Win Source
  • Supply and Demand: Balanced
  • Temperature Range: -55°C to 175°C (TJ)
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Rds On: 200 mOhm @ 6A, 5V
  • Gate-Source Threshold Voltage: 2V @ 250μA

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