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Same model may have multiple batches, images only for reference.
SI2302ADS-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI2302ADS-T1-E3

Part No SI2302ADS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.1A SOT23-3
Datasheet
SI2302ADS-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 50μA
Max Gate Charge 10nC @ 4.5V
Max Input Capacitance 300pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 3.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 028362-SI2302ADS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Portable Devices
Family Name Si2302ADS
Introduction Date April 30, 2002
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian SI2302ADS-T1-E3 CAD Model

Description

The Si2302ADS-T1-E3 is an N-Channel MOSFET used in industrial, power management, and portable devices manufactured by Vishay.

  • Product Status: Obsolete
  • Popularity: High
  • Gate-Source Threshold Voltage: 1.2V @ 50μA
  • Maximum Rds On @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
  • Packaging: SOT-23-3 (TO-236)
  • Mounting Technology: SMD (SMT)

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