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SI2309DS-T1-E3 Vishay SI2309DS-T1-E3 Real Image
Same model may have multiple batches, images only for reference.
SI2309DS-T1-E3 Vishay SI2309DS-T1-E3 Real Image
SI2309DS-T1-E3 Vishay SI2309DS-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI2309DS-T1-E3

Part No SI2309DS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 1.25A SOT23-3
Datasheet
SI2309DS-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 12nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 340 mOhm @ 1.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 109258-SI2309DS-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI2309DS-T1-E3 CAD Model

Description

The Vishay SI2309DS-T1-E3 is a P-channel MOSFET with a drain-source breakdown voltage of 60V and a maximum Rds On of 340 mOhm @ 1.25A and 10V.

  • Application: Power Management
  • Maximum Power Dissipation: 1.25W (Ta)
  • Package: SOT-23-3 (TO-236)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Product Status: Obsolete (EOL)
  • Package Type: Reel
  • REACH Compliance: Unaffected

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