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Same model may have multiple batches, images only for reference.
SI4330DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4330DY-T1-E3

Part No SI4330DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6.6A 8-SOIC
Datasheet
SI4330DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.6A
Maximum Rds On at Id,Vgs 16.5 mOhm @ 8.7A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 138171-SI4330DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4330DY-T1-E3 CAD Model

Description

The Vishay 138171-SI4330DY-T1-E3 is a 2 N-Channel (Dual) FET with logic level gate feature.

  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 6.6A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 20nC @ 4.5V
  • Maximum Rds On: 16.5 mOhm @ 8.7A, 10V
  • Used in: Discrete Semiconductor Products
  • Status: obsolete
  • Popularity: medium
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2691 $57.8565
525+ $0.2218 $116.4450
810+ $0.2148 $173.9880
1,115+ $0.2079 $231.8085
1,440+ $0.2010 $289.4400
1,925+ $0.1802 $346.8850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,300 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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