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Same model may have multiple batches, images only for reference.
SI4436DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4436DY-T1-GE3

Part No SI4436DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 8A 8-SOIC
Datasheet
SI4436DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 1100pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 064492-SI4436DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Lighting
Ultra Librarian 3D Model Ultra Librarian SI4436DY-T1-GE3 CAD Model

Description

The Vishay MOSFET is an N-Channel MOSFET that is designed for use in industrial power management and lighting applications.

  • Maximum Power Dissipation: 2.5W (Ta) and 5W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 8A (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 32nC @ 10V
  • Maximum Input Capacitance: 1100pF @ 30V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: 8-SO
  • Maximum Rds On @ Id,Vgs: 36 mOhm @ 4.6A, 10V
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
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Availability: 15,000 pieces
MOQ: 18 pcs
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