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SI4559ADY-T1-E3

Part No SI4559ADY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 60V 5.3A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 5.3A, 3.9A
Maximum Rds On at Id,Vgs 58 mOhm @ 4.3A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 665pF @ 15V
Maximum Power Dissipation 3.1W, 3.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 064496-SI4559ADY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI4559ADY-T1-E3 CAD Model

Description

The SI4559ADY-T1-E3 is an N and P-channel FET type electronic component from Vishay.

  • Status: Balance between the supply and demand
  • Popularity: Medium
  • Used In: Industrial applications and power management
  • Packaging: Reel-TR
  • Mounting: SMD
  • Maximum Power Dissipation: 3.1W and 3.4W
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 5.3A and 3.9A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On @ Id,Vgs: 58 mOhm @ 4.3A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7153 $50.0710
150+ $0.6692 $100.3800
235+ $0.6461 $151.8335
335+ $0.6000 $201.0000
435+ $0.5769 $250.9515
545+ $0.5538 $301.8210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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