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Same model may have multiple batches, images only for reference.
SI4562DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4562DY-T1-E3

Part No SI4562DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 8-SOIC
Datasheet
SI4562DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Maximum Rds On at Id,Vgs 25 mOhm @ 7.1A, 4.5V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 50nC @ 4.5V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 321959-SI4562DY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4562DY-T1-E3 CAD Model

Description

The 321959-SI4562DY-T1-E3 is a N and P-Channel FET with a logic level gate.

  • Breakdown Voltage: 20V
  • Maximum Power Dissipation: 2W
  • Gate-Source Threshold Voltage: 1.6V @ 250μA
  • Maximum Rds On @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V
  • Package: 8-SO
  • Packaging: Reel - TR
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9464 $61.5160
150+ $0.7766 $116.4900
235+ $0.7524 $176.8140
320+ $0.7281 $232.9920
415+ $0.7038 $292.0770
550+ $0.6310 $347.0500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 657 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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