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Same model may have multiple batches, images only for reference.
SI4837DY-T1-E3
Same model may have multiple batches, images only for reference.

SI4837DY-T1-E3

Part No SI4837DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-Channel MOSFETs 30V 8.3A 2.5W
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SO
Continuous Drain Current (ID) 6.1 A
Drain to Source Resistance 20 mΩ
Drain to Source Voltage (Vdss) -30 V
Fall Time 21 ns
Gate to Source Voltage (Vgs) 20 V
Height 1.55 mm
Length 5 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.38 W
Min Operating Temperature -55 °C
Number of Channels 1
Power Dissipation 1.38 W
Rise Time 15 ns
RoHS Non-Compliant
Turn-Off Delay Time 56 ns
Turn-On Delay Time 17 ns
Weight 186.993455 mg
Width 4 mm
Win Source Part Number 1092881-SI4837DY-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI4837DY-T1-E3 CAD Model

Description

The Vishay SI4837DY-T1-E3 is a P-Channel MOSFET transistor.

  • Drain to Source Voltage: -30V
  • Continuous Drain Current: 6.1A
  • Power Dissipation: 1.38W
  • Gate to Source Voltage: 20V
  • Package: SO
  • Mounting: surface mount
  • Operating Temperature: -55°C to 150°C
  • Turn-On Delay Time: 17ns
  • Turn-Off Delay Time: 56ns
  • RoHS Compliance: No

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