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Same model may have multiple batches, images only for reference.
SI4913DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4913DY-T1-E3

Part No SI4913DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 7.1A 8-SOIC
Datasheet
SI4913DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.1A
Maximum Rds On at Id,Vgs 15 mOhm @ 9.4A, 4.5V
Gate-Source Threshold Voltage 1V @ 500μA
Max Gate Charge 65nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 141425-SI4913DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4913DY-T1-E3 CAD Model

Description

The SI4913DY-T1-E3 FET from Vishay is a high-quality FET designed for use in electronic circuits.

  • Maximum Power Dissipation: 1.1W
  • Continuous Drain Current: 7.1A
  • Package: reel - TR
  • FET Type: 2 P-Channel (Dual)
  • Category: Discrete Semiconductor Products
  • ECCN: EAR99 compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.9293 $59.1516
29+ $4.0446 $117.2934
45+ $3.9182 $176.3190
61+ $3.7919 $231.3059
79+ $3.6654 $289.5666
106+ $3.2862 $348.3372
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Availability: 3,543 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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