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Same model may have multiple batches, images only for reference.
SI4927DY-T1-E3
Same model may have multiple batches, images only for reference.

SI4927DY-T1-E3

Part No SI4927DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Dual MOSFETs 30V 7.4A 2.5W
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SO
Continuous Drain Current (ID) 7.4 A
Drain to Source Resistance 28 mΩ
Drain to Source Voltage (Vdss) -30 V
Element Configuration Dual
Fall Time 42 ns
Gate to Source Voltage (Vgs) 20 V
Height 1.55 mm
Length 5 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 2.5 W
Min Operating Temperature -55 °C
Number of Channels 2
Power Dissipation 2.5 W
Rise Time 9 ns
RoHS Non-Compliant
Turn-Off Delay Time 75 ns
Turn-On Delay Time 13 ns
Weight 186.993455 mg
Width 4 mm
Win Source Part Number 1092890-SI4927DY-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI4927DY-T1-E3 CAD Model

Description

The SI4927DY-T1-E3 is a dual N-channel MOSFET from Vishay.

  • Maximum Drain to Source Voltage: -30 V
  • Maximum Continuous Drain Current: 7.4 A
  • On-Resistance: 28 mΩ
  • Package: SO-8
  • RoHS Compliant: Yes

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