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Same model may have multiple batches, images only for reference.
SI4940DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4940DY-T1-E3

Part No SI4940DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 4.2A 8-SOIC
Datasheet
SI4940DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 4.2A
Maximum Rds On at Id,Vgs 36 mOhm @ 5.7A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 14nC @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 028560-SI4940DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4940DY-T1-E3 CAD Model

Description

The Vishay SI4940DY-T1-E3 is a medium-popularity N-channel MOSFET transistor that is designed to balance supply and demand.

  • Manufacturer: Vishay
  • Category: Discrete Semiconductor Products
  • Status: obsolete and has limited supply and demand
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 4.2A
  • Type: logic level gate MOSFET transistor
  • Mounting: surface-mount device

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,400 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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