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SI4973DY-T1-E3

Part No SI4973DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 5.8A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.8A
Maximum Rds On at Id,Vgs 23 mOhm @ 7.6A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 56nC @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 112633-SI4973DY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Consumer Electronics, Computers & Computer Peripherals
Ultra Librarian 3D Model Ultra Librarian SI4973DY-T1-E3 CAD Model

Description

The Vishay dual P-Channel FET with a manufacturer part number of 112633-SI4973DY-T1-E3 is a high-quality electronic component used in various applications.

  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Category: Discrete Semiconductor Products
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 5.8A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On @ Id,Vgs: 23 mOhm @ 7.6A, 10V
  • Mounting Technology: SMD (SMT)
  • Case/Package: 8-SO
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Common Applications: Power management, consumer electronics, computers, and computer peripherals

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6468 $58.2120
220+ $0.5313 $116.8860
340+ $0.5140 $174.7600
465+ $0.4978 $231.4770
600+ $0.4816 $288.9600
805+ $0.4320 $347.7600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 44,600 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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