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Same model may have multiple batches, images only for reference.
SI5947DU-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5947DU-T1-GE3

Part No SI5947DU-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2P-CH 20V 6A PPAK CHIPFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
Part Status Obsolete (End Of Life)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 6A
Rds On (Maximum) at Id, Vgs 58mOhm at 3.6A, 4.5V
Vgs(th) (Maximum) at Id 1.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 17nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 480pF at 10V
Power - Max 10.4W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package PowerPAK ChipFET Dual
Supplier Device Package PowerPAK ChipFet Dual
Part Number Series SI5947
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Balance
Win Source Part Number 802296-SI5947DU-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5947DU-T1-GE3 CAD Model

Description

The SI5947DU-T1-GE3 is a dual P-channel logic level gate FET manufactured by Vishay Siliconix.

  • FET Type: Dual P-Channel
  • Mounting Type: Surface Mount
  • Package: PowerPAK Chipfet Dual
  • Obsolete: Yes (end of life)
  • Drain to Source Voltage: 20V
  • Power: 10.4W
  • Packaging: Reel
  • Manufacturer Pack Quantity: 3,000
  • Operating Temperature Range: -55°C ~ 150°C
  • Rds On (Maximum) @ Id, Vgs: 58mOhm @ 3.6A, 4.5V
  • Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 480pF @ 10V
  • Current Continuous Drain (Id) @ 25°C: 6A
  • Vgs(th) (Maximum) @ Id: 1.5V @ 250μA
  • Part Number Series: SI5947

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