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Same model may have multiple batches, images only for reference.
SI6963BDQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6963BDQ-T1-E3

Part No SI6963BDQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 3.4A 8TSSOP
Datasheet
SI6963BDQ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.4A
Maximum Rds On at Id,Vgs 45 mOhm @ 3.9A, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 11nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 126458-SI6963BDQ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6963BDQ-T1-E3 CAD Model

Description

The Vishay SI6963BDQ-T1-E3 is an SMD (SMT) mounted, dual 2 P-Channel FET with logic level gate feature.

  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Power Dissipation: 830mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 3.4A
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Maximum Gate Charge: 11nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 45 mOhm @ 3.9A, 4.5V
  • Supply and Demand Status: Balanced
  • Package: 8-TSSOP

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7715 $57.8625
185+ $0.6332 $117.1420
285+ $0.6133 $174.7905
390+ $0.5936 $231.5040
505+ $0.5738 $289.7690
675+ $0.5144 $347.2200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,867 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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