The Vishay SI7850DP-T1-E3 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 60V and a continuous drain current of 6.2A at 25°C.

• Maximum Power Dissipation: 1.8W (Ta)
• Application: discrete semiconductor products
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Gate Charge: 27nC @ 10V
• Maximum Rds On @ Id, Vgs: 22 mOhm @ 10.3A, 10V
• Package: PowerPAK SO-8
• Operating Temperature: -55°C to 150°C (TJ)
• Features: anti-sulfur, automotive AEC-Q200, and moisture resistant
• Popularity: commonly used
• Supply and Demand Status: limited
• Drain-Source Breakdown Voltage: 60V
• Continuous Drain Current @ 25°C: 6.2A