The Vishay SIA456DJ-T3-GE3 is an N-Channel MOSFET transistor from the TrenchFET series.

• Category: It is designed for use in discrete semiconductor products.
• Application: specifically in FETs and MOSFETs applications.
• Drain to Source Voltage (Vdss): With a drain to source voltage (Vdss) of 200V.
• Continuous Drain Current (Id): and a continuous drain current (Id) of 1.1A (Ta), 2.6A (Tc), this transistor offers high performance.
• Rds On (Max) @ Id, Vgs: The Rds On (Max) @ Id, Vgs is 1.38Ohm @ 750mA, 4.5V, ensuring low resistance and efficient operation.
• Gate Charge (Qg): It has a gate charge (Qg) of 14.5nC.
• Input Capacitance (Ciss): and an input capacitance (Ciss) of 350pF.
• Temperature Range: With a wide temperature range of -55°C to 150°C, this transistor is suitable for various operating conditions.
• Status: The Vishay SIA456DJ-T3-GE3 is an active product and is available for purchase.