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Same model may have multiple batches, images only for reference.
SIE844DF-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SIE844DF-T1-E3

Part No SIE844DF-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 44.5A 10POLARPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 44.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 12.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2150 pF @ 15 V
Power Dissipation (Max) 5.2W (Ta), 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 10-PolarPAK® (U)
Package / Case 10-PolarPAK® (U)
Base Product Number SIE844
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 846100-SIE844DF-T1-E3
Ultra Librarian 3D Model Ultra Librarian SIE844DF-T1-E3 CAD Model

Description

The SIE844DF-T1-E3 is a N-Channel MOSFET transistor from Vishay's TrenchFET series.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 44.5A
  • On-Resistance (Rds On): 7mOhm @ 12.1A
  • Gate-Source Voltage (Vgs) Threshold: 3V
  • Package: 10-PolarPAK
  • Power Dissipation: 5.2W (Ta), 25W (Tc)
  • Mounting: Surface mount
  • Packaging: Tape & reel
  • Status: Obsolete

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Quantity Unit Price Ext. Price
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9+ $13.7549 $123.7941
14+ $13.3252 $186.5528
18+ $12.8956 $232.1208
24+ $12.4659 $299.1816
32+ $11.1758 $357.6256
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