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Same model may have multiple batches, images only for reference.
SIS776DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIS776DN-T1-GE3

Part No SIS776DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A PPAK1212-8 / N-Channel 30 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Datasheet
SIS776DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series SkyFET®, TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1360 pF @ 15 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Temperature Range - Operating -50°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SIS776
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Win Source Part Number 1093129-SIS776DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIS776DN-T1-GE3 CAD Model

Description

The SIS776DN-T1-GE3 is a MOSFET transistor from Vishay Siliconix.

  • Series: SkyFET and TrenchFET
  • Category: Discrete semiconductor products
  • Power Dissipation: 3.8W
  • Gate Charge: 36nC @ 10V
  • Vgs(th): 2.5V @ 250µA
  • Drain to Source Voltage (Vdss): 30V

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