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SISA34DN-T1-GE3

Part No SISA34DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 15 V
Power Dissipation (Max) 20.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SISA34
Other Names SISA34DN-T1-GE3CT,SISA34DN-T1-GE3TR,SISA34DN-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277611-SISA34DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISA34DN-T1-GE3 CAD Model

Description

The Vishay Siliconix electronic component is a MOSFET transistor with a P-Channel FET type and Schottky Diode feature.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 6.6A (Tc)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Power Dissipation: 2W (Ta), 3.3W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 15 V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Designed to: provide reliable performance in electronic circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6694 $60.2460
215+ $0.5493 $118.0995
330+ $0.5322 $175.6260
450+ $0.5151 $231.7950
585+ $0.4978 $291.2130
780+ $0.4463 $348.1140
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,310 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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