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SQJ463EP-T1_GE3

Part No SQJ463EP-T1_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 30A / Trans MOSFET P-CH 40V 30A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET
Packaging Reel package
Channel Type Type P
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 150nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5875pF @ 20V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 83W (Tc)
Rds On (Maximum) @ Id, Vgs 10 mOhm @ 18A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK SO-8
Package PowerPAK SO-8
Win Source Part Number 792806-SQJ463EP-T1_GE3
Popularity Medium
Supply and Demand Status Limited
Family Name SQJ463EP
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SQJ463EP-T1_GE3 CAD Model

Description

The Vishay Siliconix SQJ463EP-T1_GE3 MOSFET is a power P-channel type with a current rating of 30A (Tc).

  • Drain-Source Voltage: 40V
  • Gate-Source Voltage (Vgs(th)): 2.5V @ 250μA
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Power Dissipation: 83W (Tc)
  • Technology: TrenchFET
  • Package: PowerPAK SO-8
  • Gate Charge (Qg) (Maximum) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 5875pF @ 20V
  • Channel Type: P
  • Rds On (Maximum) @ Id, Vgs: 10 mOhm @ 18A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2594 $50.3760
100+ $1.0334 $103.3400
150+ $1.0011 $150.1650
210+ $0.9688 $203.4480
270+ $0.9365 $252.8550
360+ $0.8396 $302.2560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,323 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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