The AO4625 is a P-Channel enhancement mode MOSFET from Alpha & Omega Semiconductor. It is designed for power management applications requiring high efficiency and low on-resistance. This MOSFET utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge characteristics.

Applications

• Power Management in Portable Devices
• Load Switching
• DC-DC Converters
• Battery Management Systems

Features

• Low RDS(ON): RDS(ON) = 0.011Ω (typ.) @ VGS = -10V
• Low Gate Charge: Qg = 29nC (typ.) @ VGS = -10V
• High Current Capability: ID = -15A
• Avalanche Rated
• 100% UIS Tested

Benefits

• High Efficiency: Low RDS(ON) minimizes conduction losses, resulting in higher efficiency in power conversion applications.
• Reduced Power Dissipation: Lower power dissipation leads to cooler operation and improved system reliability.
• High Current Handling: Capable of handling high currents, making it suitable for demanding applications.

Additional Details

The AO4625 is available in a SO-8 package. It has a drain-source voltage (VDS) of -30V. The operating and storage junction temperature range is -55°C to +150°C.