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DMP2215L-7

Part No DMP2215L-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.7A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.25V @ 250μA
Max Gate Charge 5.3nC @ 4.5V
Max Input Capacitance 250pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.08W (Ta)
Maximum Rds On at Id,Vgs 100 mOhm @ 2.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 014487-DMP2215L-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMP2215L-7 CAD Model

Description

Product Overview: DMP2215L-7 - P-Channel MOSFET from Diodes Incorporated

The DMP2215L-7 is a high-performance, P-Channel enhancement mode field-effect transistor (MOSFET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to deliver efficient power management and switching with a low on-resistance and a compact form factor, making it an ideal choice for a wide range of applications.

With its P-Channel configuration, the DMP2215L-7 is particularly suited for use in load switch and power management circuits that require a negative gate drive relative to the source terminal. This feature simplifies the gate drive circuitry in systems with a common ground. The MOSFET is housed in a small SOT-23 package, which is favored for its space-saving design, allowing for high-density PCB layouts and miniaturization of the end products.

The DMP2215L-7 boasts a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -3.1A at 25°C, which demonstrates its capability to handle significant power levels. The low threshold voltage ensures that the MOSFET can be easily turned on with low gate voltages, making it compatible with modern low-voltage logic and driving circuits.

Key specifications of the DMP2215L-7 include:

  • Low on-resistance (RDS(on)) of only 65mΩ at VGS = -4.5V, which minimizes power loss and improves efficiency.
  • High power dissipation of 1.25W, allowing it to handle higher currents without overheating.
  • Fast switching speeds, which are essential for reducing switching losses in PWM applications.
  • Gate-source voltage (VGS) of ±8V, providing a good safety margin to prevent gate oxide breakdown.
  • Extended operating temperature range from -55°C to +150°C, ensuring reliable performance under extreme conditions.

The DMP2215L-7 is RoHS compliant and is characterized by its lead-free finish, reflecting Diodes Incorporated's commitment to environmental sustainability. Whether it's for power management in portable devices, load switching, or other power-related applications, the DMP2215L-7 is a reliable and efficient solution that engineers and designers can trust.

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Pricing & Ordering

Quantity Unit Price Ext. Price
960+ $0.0523 $50.2080
2,335+ $0.0429 $100.1715
3,610+ $0.0416 $150.1760
4,980+ $0.0402 $200.1960
6,430+ $0.0389 $250.1270
8,600+ $0.0349 $300.1400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 960 pcs
Order Increment : 1 pcs
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