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ZXMN10A08E6TC

Part No ZXMN10A08E6TC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.5A SOT23-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 7.7nC @ 10V
Max Input Capacitance 405pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 250 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-26
Dimension SOT-23-6
Win Source Part Number 1120384-ZXMN10A08E6TC
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian ZXMN10A08E6TC CAD Model

Description

Introducing the ZXMN10A08E6TC MOSFET by Diodes Incorporated

Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products, brings to the market the ZXMN10A08E6TC, a cutting-edge N-channel enhancement mode field-effect transistor (MOSFET) designed for power management applications. This MOSFET is engineered to offer high efficiency and reliability for a wide range of applications.

The ZXMN10A08E6TC boasts an ultra-low on-resistance (RDS(on)) of just 8.5mΩ at VGS = 10V, ensuring minimal power loss and heat generation during operation. This feature makes it an excellent choice for power-intensive applications where efficiency is paramount. The device is housed in a compact and robust E6 package, which provides not only space-saving benefits but also excellent thermal performance and durability.

This MOSFET operates over a wide range of voltages, with a maximum drain-source voltage (VDSS) of 100V, making it suitable for high-voltage applications. The ZXMN10A08E6TC can handle a continuous drain current (ID) of up to 25A, allowing it to drive significant loads without faltering. Additionally, its maximum power dissipation (PD) is rated at 2.4W, providing ample headroom for a variety of demanding scenarios.

One of the key benefits of the ZXMN10A08E6TC is its fast switching performance, which is critical for reducing switching losses in power conversion systems. This is complemented by its low threshold voltage (Vth), which ensures that the device can be easily controlled and switched with standard logic levels.

The ZXMN10A08E6TC is designed to be used in a variety of applications, including DC-DC converters, motor drives, power supplies, and other power management tasks that require high efficiency and reliability. Its robustness and performance make it an ideal choice for both consumer electronics and industrial systems.

Overall, the ZXMN10A08E6TC from Diodes Incorporated represents a blend of innovation, efficiency, and reliability, making it a top choice for engineers and designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4000 $58.0000
355+ $0.3283 $116.5465
545+ $0.3180 $173.3100
755+ $0.3077 $232.3135
975+ $0.2975 $290.0625
1,300+ $0.2667 $346.7100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 110,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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