The FDD5202P is a P-Channel PowerTrench® MOSFET from Fairchild Semiconductor (now ON Semiconductor). This MOSFET is designed for high-efficiency power conversion applications. It features low on-resistance and gate charge, contributing to reduced power losses and improved system performance. It's particularly useful in applications where space is limited and efficiency is critical.

Applications

• Load Switching
• Power Management in Portable Devices
• DC-DC Conversion
• Battery Management Systems
• Reverse Polarity Protection

Features

• Low On-Resistance: Reduces conduction losses, enhancing efficiency.
• Low Gate Charge: Minimizes switching losses, improving efficiency at high frequencies.
• High Drain Current Capability: Supports applications requiring significant current.
• Fast Switching Speed: Enables efficient operation in high-frequency applications.
• PowerTrench® Technology: Fairchild's advanced MOSFET technology for optimized performance.
• RoHS Compliant: Environmentally friendly and compliant with regulations.

Benefits

• Increased Efficiency: Lower on-resistance and gate charge contribute to higher overall efficiency in power conversion applications.
• Improved Battery Life: In portable devices, higher efficiency translates to longer battery life.
• Reduced Heat Dissipation: Lower power losses result in less heat generation, simplifying thermal management.
• Simplified Design: Easier to implement in power supply designs due to its predictable characteristics.
• Compliance: RoHS compliance ensures adherence to environmental regulations.

Additional Details

The FDD5202P has a drain-source voltage (VDS) rating of -25V and a continuous drain current (ID) rating of -8A (at Tc = 25°C). It exhibits a very low typical on-resistance (RDS(on)), which contributes significantly to its high efficiency. The device is typically supplied in a D-PAK package, which is suitable for surface mount applications and provides good thermal performance. The gate threshold voltage (VGS(th)) is typically around -1V to -3V. The PowerTrench® technology enables a smaller die size with improved performance characteristics. The device's fast switching speed and low gate charge (Qg) contribute to reduced switching losses. This MOSFET is well-suited for applications requiring high efficiency, reliability, and compact size. The device is designed to operate over a wide temperature range. It's a P-Channel MOSFET, meaning it's turned on when the gate voltage is more negative than the source voltage.