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FDMC8200

Part No FDMC8200
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A/12A POWER33 / Trans MOSFET N-CH Si 30V 18A 8-Pin WDFN EP T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A, 12A
Maximum Rds On at Id,Vgs 20 mOhm @ 6A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 660pF @ 15V
Maximum Power Dissipation 700mW, 900mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-Power33 (3x3)
Win Source Part Number 016038-FDMC8200
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Commercial
Quantity per package 3k pcs
Family Name FDMC8200
Introduction Date March 23, 2009
ECCN EAR99
Country of Origin Malaysia, Taiwan, Thailand
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian FDMC8200 CAD Model

Description

The FDMC8200 MOSFET is a dual N-channel, surface mount device manufactured by Fairchild/ON Semiconductor. It features a logic level gate and is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8A and 12A at 25°C
  • Package: 8-Power33 (3x3)
  • Power Dissipation: 700mW and 900mW
  • Drive Voltage: 3V @ 250μA
  • Rds On (Max): 20 mOhm @ 6A, 10V
  • Popularity: High
  • Quantity per Package: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6302 $50.4160
170+ $0.5896 $100.2320
265+ $0.5693 $150.8645
380+ $0.5286 $200.8680
495+ $0.5083 $251.6085
615+ $0.4879 $300.0585
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,420 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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