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Same model may have multiple batches, images only for reference.
FDS86140 Real Image
Same model may have multiple batches, images only for reference.

FDS86140

Part No FDS86140
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 11.2A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 11.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 2580pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 9.8 mOhm @ 11.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 016190-FDS86140
Popularity Medium
Supply and Demand Status Limited
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS86140 CAD Model

Description

The Fairchild/ON Semiconductor 016190-FDS86140 is an N-Channel MOSFET.

  • Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
  • Mounting Type: SMD (SMT)
  • Drive Voltage: 6V and 10V
  • Drain-Source Breakdown Voltage: 100V
  • Rds On (Max): 9.8 mOhm @ 11.2A, 10V
  • Win Source Part Number: 016190-FDS86140
  • Popularity: Medium
  • Supply and Demand: Limited

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Quantity Unit Price Ext. Price
20+ $2.6195 $52.3900
47+ $2.1493 $101.0171
73+ $2.0821 $151.9933
100+ $2.0150 $201.5000
129+ $1.9478 $251.2662
172+ $1.7463 $300.3636
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