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MJE801

Part No MJE801
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors (BJT) - Single
Description Monolithic Construction With Built-in Base- Emitter Resistors
Sample
Rohs State Need to verify
ECAD Module
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RoHS State Request Verification
Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1223750-MJE801
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian MJE801 CAD Model

Description

The MJE801 is a NPN Bipolar Junction Transistor (BJT) manufactured by Fairchild/ON Semiconductor. It is designed for use in medium power linear and switching applications. This transistor is known for its robust performance and reliability in various electronic circuits.

Applications

  • Linear Amplifiers
  • Switching Regulators
  • Motor Control Circuits
  • Relay Drivers
  • Solenoid Drivers
  • Power Amplifiers

Features

  • NPN BJT: Standard NPN transistor configuration.
  • Medium Power: Designed for applications requiring moderate power dissipation.
  • High Collector Current: Capable of handling relatively high collector currents.
  • Low Saturation Voltage: Minimizes power loss during switching.
  • Fast Switching Speed: Suitable for high-frequency switching applications.

Benefits

  • Efficient Switching: Low saturation voltage ensures efficient switching performance.
  • Versatile: Suitable for a wide range of applications, including amplification and switching.
  • Reliable Operation: Robust design ensures reliable performance in various environments.
  • Easy to Use: Standard transistor configuration simplifies circuit design.
  • Cost-Effective: Provides a cost-effective solution for medium-power applications.

Additional Details

The MJE801 is typically packaged in a TO-225 or similar package, allowing for easy mounting and heatsinking. A heatsink may be required to dissipate the heat generated by the transistor, especially when operating at high currents or voltages. The datasheet specifies the maximum collector current, collector-emitter voltage, base current, and power dissipation. Proper biasing is crucial to ensure that the transistor operates within its safe operating area. It's commonly used where a small control signal needs to switch or amplify a medium level of current.

When designing with the MJE801, it's essential to consider the thermal characteristics of the device and ensure that the junction temperature remains within the specified limits. Overheating can lead to device failure. Detailed application notes and design guidelines are available from ON Semiconductor to assist with the design and implementation of MJE801-based circuits.

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