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Same model may have multiple batches, images only for reference.
SUD50N03-12P-GE3 Real Image
Same model may have multiple batches, images only for reference.

SUD50N03-12P-GE3

Part No SUD50N03-12P-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16.8A TO252
Datasheet
SUD50N03-12P-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 39W (Tc)
Maximum Rds On at Id,Vgs 17 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1104097-SUD50N03-12P-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUD50N03-12P-GE3 CAD Model

Description

The Vishay SUD50N03-12P-GE3 is a MOSFET transistor with an N-Channel polarity. It has a maximum power dissipation of 39W and a drain-source breakdown voltage of 30V.

  • Polarity: N-Channel
  • Maximum Power Dissipation: 39W
  • Drain-Source Breakdown Voltage: 30V
  • Mounting: SMD (SMT)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Continuous Drain Current: 16.8A (Ta) @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 42nC @ 10V
  • Maximum Rds On: 17 mOhm @ 20A, 10V

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95+ $1.2834 $121.9230
140+ $1.2432 $174.0480
195+ $1.2032 $234.6240
250+ $1.1630 $290.7500
335+ $1.0427 $349.3045
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