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NSS1C200MZ4T3G

Part No NSS1C200MZ4T3G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 100V 2A SOT223  /  Bipolar (BJT) Transistor PNP 100 V 2 A 120MHz 800 mW Surface Mount SOT-223 (TO-261)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Bulk
Transistor Type PNP
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 220mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 2V
Power - Max 800 mW
Frequency - Transition 120MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261)
MSL Level Vendor Undefined
REACH Status REACH Affected
Other Names 2156-NSS1C200MZ4T3G-488
Standard Package 1
Win Source Part Number 1082800-NSS1C200MZ4T3G
Ultra Librarian 3D Model Ultra Librarian NSS1C200MZ4T3G CAD Model

Description

ON Semiconductor NSS1C200MZ4T3G Overview

The NSS1C200MZ4T3G from ON Semiconductor is a high-performance, energy-efficient N-channel Power MOSFET designed for a variety of applications. It is a part of the industry-leading portfolio of MOSFETs that provide users with superior switching performance and reliability.

Key Features

  • Low On-Resistance: This MOSFET features a low on-resistance, which reduces losses during operation, enhancing overall efficiency and performance.
  • High-Speed Switching: With its fast switching capabilities, the NSS1C200MZ4T3G is suitable for high-frequency applications, ensuring minimal delay and energy waste.
  • Low Threshold Voltage: The device operates at a low threshold voltage, making it ideal for low-voltage applications and helping to conserve power.
  • High-Temperature Performance: It is designed to withstand high temperatures, which ensures reliable operation even under strenuous conditions.
  • Zener-Protected: The built-in Zener diode provides protection against overvoltage, enhancing the durability of the MOSFET.

Applications

The NSS1C200MZ4T3G is versatile and can be used in various applications, including:

  • Power Management
  • DC/DC Converters
  • Battery Powered Devices
  • Motor Control Circuits
  • Switching Regulators
  • Load Switching

Product Specifications

This MOSFET comes in a small surface-mount package, which makes it suitable for compact designs. Below are some of the key specifications:

  • Voltage Rating: 20V
  • Drain-to-Source Current (Continuous): 1.7A
  • Power Dissipation: 1.25W
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23-3 (TO-236)

With its robust construction and advanced features, the NSS1C200MZ4T3G is a reliable choice for designers looking for a MOSFET that offers both efficiency and durability. ON Semiconductor's commitment to quality ensures that this product will meet the demanding requirements of a wide array of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7277 $50.9390
170+ $0.5971 $101.5070
260+ $0.5784 $150.3840
360+ $0.5598 $201.5280
465+ $0.5411 $251.6115
620+ $0.4851 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,910 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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