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SSU1N50B

Part No SSU1N50B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 520V 1.3A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 520V
Continuous Drain Current at 25°C 1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 340pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 26W (Tc)
Maximum Rds On at Id,Vgs 5.3 Ohm @ 650mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251 (IPAK)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 066137-SSU1N50B
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SSU1N50B CAD Model

Description

The Fairchild/ON Semiconductor SSU1N50B is a N-channel MOSFET transistor that is ideal for use in a variety of applications.

  • Maximum Power Dissipation: 2.5W (Ta), 26W (Tc)
  • Drain-Source Breakdown Voltage: 520V
  • Continuous Drain Current @ 25°C: 1.3A (Tc)
  • Maximum Rds On @ Id,Vgs: 5.3 Ohm @ 650mA, 10V
  • Mounting: Through-hole technology
  • Package: Tube/rail
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: Medium level of popularity

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4925 $59.8200
57+ $2.0455 $116.5935
88+ $1.9808 $174.3104
121+ $1.9173 $231.9933
156+ $1.8538 $289.1928
209+ $1.6620 $347.3580
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Availability: 9,000 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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