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Same model may have multiple batches, images only for reference.
AUIRL3705ZS Infineon Technologies
Same model may have multiple batches, images only for reference.

AUIRL3705ZS

Part No AUIRL3705ZS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
AUIRL3705ZS Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 60nC @ 5V
Max Input Capacitance 2880pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 52A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1020802-AUIRL3705ZS
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AUIRL3705ZS CAD Model

Description

The MOSFET is a powerful electronic component designed for high-performance applications, manufactured by Infineon Technologies.

  • Maximum Power Dissipation: 130W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Polarity: N-channel
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 60nC @ 5V
  • Package: D2PAK
  • Applications: Suitable for use in a wide range of applications, including power supplies, motor control, and lighting

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57+ $2.0503 $116.8671
88+ $1.9861 $174.7768
121+ $1.9221 $232.5741
156+ $1.8581 $289.8636
209+ $1.6657 $348.1313
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