The BSR802N is a N-Channel enhancement mode RF power MOSFET from Infineon Technologies. It's designed for high-frequency applications such as RF amplifiers and oscillators. This MOSFET offers high gain and low noise, making it suitable for demanding wireless communication systems.

Applications:

• RF Amplifiers
• Oscillators
• Wireless communication systems
• ISM band applications
• Satellite communication systems

Features:

• N-Channel Enhancement Mode
• Low Noise Figure
• High Power Gain
• High Breakdown Voltage
• Optimized for High Frequency Operation
• Surface Mount Package

Benefits:

• Improved signal quality in RF systems
• Increased amplification efficiency
• Reduced power consumption
• Enhanced reliability
• Compact design for space-constrained applications

Additional Details:

The BSR802N is supplied in a small surface-mount package, facilitating automated assembly. Its optimized design ensures minimal parasitic capacitances and inductances, which are crucial for stable performance at high frequencies. The high breakdown voltage ensures reliable operation even under demanding conditions. Detailed electrical characteristics, such as gate threshold voltage, drain current, and power dissipation, are available in the Infineon Technologies datasheet.