The IPB180N10S4-02 is a high-performance OptiMOS™ power MOSFET from Infineon Technologies. This N-channel MOSFET is designed for high-efficiency power conversion and management applications, offering exceptionally low on-resistance and fast switching speeds.

Applications:

• Synchronous rectification in AC-DC and DC-DC converters
• Motor control
• Power management in servers and workstations
• Battery management systems (BMS)
• Solar inverters
• Uninterruptible power supplies (UPS)
• High-frequency switching power supplies

Features:

• N-Channel MOSFET
• Voltage Rating (VDS): 100 V
• Continuous Drain Current (ID): 180 A (at 25°C)
• On-Resistance (RDS(on)): 2 mΩ (typical)
• Gate Charge (Qg): Low gate charge for fast switching
• Avalanche Rated
• Logic Level Control
• Operating Temperature Range: -55°C to +175°C
• Package: TO-263 (D²PAK)

Benefits:

• High Efficiency: Extremely low on-resistance minimizes conduction losses, increasing efficiency.
• Fast Switching: Low gate charge enables fast switching speeds, reducing switching losses.
• High Current Capability: Capable of handling high currents, suitable for demanding applications.
• Robustness: Avalanche rated for reliable operation in harsh environments.
• Simplified Design: Logic level control simplifies gate drive circuitry.
• Thermal Performance: Excellent thermal characteristics allow for efficient heat dissipation.

Additional Details:

The IPB180N10S4-02 is designed with Infineon's advanced OptiMOS™ technology, ensuring superior performance and reliability. The low on-resistance and gate charge contribute to reduced power losses and improved thermal management. The TO-263 (D²PAK) package provides excellent thermal performance, allowing for efficient heat dissipation. This MOSFET is suitable for applications requiring high efficiency, high current capability, and robust performance. Proper gate drive design and thermal management are essential for optimal performance.